DL2G50SH6N DAWIN Electronics DAWIN, DL2G50SH6N, IGBT Module, N-channel, Dual, 75 A max, 600 V, 6-Pin 6DM-2
Description
DAWIN, DL2G50SH6N, IGBT Module, N-channel, Dual, 75 A max, 600 V, 6-Pin 6DM-2
Producer
DAWIN Electronics
The product with part number DL2G50SH6N (DAWIN, DL2G50SH6N, IGBT Module, N-channel, Dual, 75 A max, 600 V, 6-Pin 6DM-2)
is from company DAWIN Electronics and distributed with basic unit price 31,07 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationDual Dimensions66 x 34 x 8.15mm Height8.15mm Length66mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current75 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation240 W Minimum Operating Temperature-40 °C Mounting TypeThrough Hole Package Type6DM-2 Pin Count6 Width34mm Product Details IGBT Modules, DAWIN Electronics DAWIN's Insulated Gate Bipolar Transistor (IGBT) Modules offer superior electrical performance in a wide range of industry standards. IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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